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9nm Resistive Memory Technology


Date:2010-12-16
9奈米超節能記憶體技術發表會
 
9nm Resistive Memory Technology
 

Increasing demand for high capacity in a compact form from portable 3C products means that Flash memory is the fastest growing semiconductor device on the market today. The capacity of Flash memory produced using existing mass production techniques is also reaching its limits as well. The NDL however has led the world in developing the world's smallest 9nm functional resistive memory (R-RAM) array cell with approximately 20 times the capacity of existing Flash memory and 1/200th of its power consumption. The new memory technology can store text equivalent to a whole library in 1 square centimeter while consuming virtually no power. Capacity can also be further increased through 3D stacking, creating all new possibilities for smaller, lighter and thinner IT electronics. This research in December 8, accomplishment was officially published at the International Electron Devices Meeting (IEDM) held in San Francisco, US. The IEDM is the most important international meeting for electronic devices. The research attracted strong interest from the international microelectronics industry and was chosen as a key paper by IEDM. Foreign professional electronic organizations such as IEEE and Low Power Engineering Community as well as the Japanese economic news (BP) all listed this development as a key report.

The "9nm Ultra Energy-Saving Memory" developed by the NDL was the work of the research team led by Prof. Ho Chia-hua. The breakthrough was achieved by using an innovative technology for controlling the movement of oxygen atoms over short distances to change the data in device memory. The technology greatly reduces power consumption and represents a breakthrough of sub-10nm memory technology. Taiwan has therefore made an important advance in nano device technology.
 

NDL Director Yang Fu-liang stated that this technology is expected to enter mass production within 5 - 10 years. When this happens, it will make a major contribution to the trillion-dollar global memory market. NDL will form a "16-8nm Nano Device Alliance" with the academia and research communities next year. Nano technology developed in recent years will be provided to the Taiwanese research and university R&D platform to accelerate the development of CMOS and memory component technologies as well as strengthen the HR foundations of Taiwan's semiconductor industry. 

9奈米電阻式記憶體技術
"The "9nm Ultra-Fast Energy-saving Technology Press Conference"; Starting from the left: Wu Chung-yu (President of NCTU and newly appointed project leader of National Science and Technology Program for Nano Technology", Dr. Ho Chia-hua(NDL), Chen Wen-hwa (President, NARL), Yang Fu-liang (Director, NDL) 
 
9奈米電阻式記憶體技術
"The "9nm Ultra-Fast Energy-saving Technology Press Conference"; Starting from the left: Wu Chung-yu (President of NCTU and newly appointed project leader of National Science and Technology Program for Nano Technology", Dr. Ho Chia-hua(NDL), Chen Wen-hwa (President, NARL), Yang Fu-liang (Director, NDL) 
 
9奈米電阻式記憶體技術
9奈米電阻式記憶體技術
 
9nm resistive memory technology